Infineon IRF5305SPBF
$ 2.28
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Related Parts
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N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
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Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount
Descriptions
Descriptions of Infineon IRF5305SPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-31A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.8
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max60 mΩ
Recovery Time110 ns
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height5.084 mm
Length10.668 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements