Infineon IRF4905PBF

Name: Infineon IRF4905PBF
Brand: Infineon
SKU: IRF4905PBF

Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.02 Ohm; Id -74A; TO-220AB; Pd 200W; Vgs +/-20V

$ 0.948

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRF4905PBF	7,969	1		0.774	0.739	0.728	0.728	0.728	1d
Newark		IRF4905PBF	59,832	1		2.840	1.770	1.610	1.280	1.280
Future Electronics	3	IRF4905PBF	130,850	50	Tube			0.995	0.940	0.895
Arrow Electronics	3	IRF4905PBF	84,458	1		2.481	1.423	1.155	0.948	0.929
Rutronik		TMOSP11792	5,750	50				0.845	0.676	0.676	15h

Inventory History

3 month trend: -12.61%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF4905PBF.

Newark

Datasheet9 pages22 years ago

Datasheet10 pages22 years ago

IHS

Mouser

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

-12.61%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF4905PBF

InfineonAUIRF4905

Price @ 1000

$ 0.948

$ 1.832

Stock

2,051,482

210,210

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

-55 V

Continuous Drain Current (ID)

74 A

Threshold Voltage

-4 V

-2 V

Rds On Max

20 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

150 W

200 W

Input Capacitance

3.4 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRF4905PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;TO-220AB;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -74 A, TO-220, IRF4905PBF

Burklin Elektronik

Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

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Transistor MOSFET P-Ch. -64A/-55V TO220 IRF 4905 PBF

Rapid Electronics

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET P-CH 55V 74A 3-Pin(3+Tab) TO-220AB

Verical

200W 20V 4V 180nC(Max) @ 10V 1P 55V 20m¦¸@ 10V 42A 3.4nF@ 25V D2PAK 9.02mm

UnikeyIC

HEXFET POWER MOSFET Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

P Channel Mosfet, -55V, 74A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:74A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF4905PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P, -55V, -74A, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:64A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:260A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.75°C/W; Transistors, No. of:1; Voltage, Vds:55V; Voltage, Vds Max:55V

Farnell