Infineon IRF3205ZPBF

Name: Infineon IRF3205ZPBF
Brand: Infineon
SKU: IRF3205ZPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.9MILLIOHMS; Id 110A; TO-220AB; Pd 170W; -55DE

$ 0.649

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF3205ZPBF	51,339					0.697	0.578	0.515	9h
RS (Formerly Allied Electronics)		IRF3205ZPBF	3	1	Bulk	0.930	0.840	0.840	0.840	0.840	2d
DigiKey		IRF3205ZPBF-ND	2,389	1	Tube	2.250	2.250	0.980	0.760	0.760
Avnet		IRF3205ZPBF	0	1K					0.486	0.469	3d
Future Electronics	2	IRF3205ZPBF	0	25	Tube			0.750	0.735	0.685

Inventory History

3 month trend: -10.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3205ZPBF.

IHS

Datasheet12 pages15 years ago

Datasheet13 pages15 years ago

Datasheet13 pages22 years ago

Datasheet12 pages14 years ago

DigiKey

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-10.30%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3205ZPBF

InfineonAUIRF3205Z

Price @ 1000

$ 0.649

$ 2.81

Stock

792,987

610,647

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

6.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.45 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

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Descriptions

Descriptions of Infineon IRF3205ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 6.5 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

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55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 170 W

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Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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MOSFET, N, 55V, 110A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:6.5mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:440A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

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Infineon