Infineon IRF1010ZPBF

Name: Infineon IRF1010ZPBF
Brand: Infineon
SKU: IRF1010ZPBF

Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

$ 0.928

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF1010ZPBF	13,400					1.100	0.913	0.814	7h
RS (Formerly Allied Electronics)		IRF1010ZPBF	0	5	Bulk		1.920	1.730	1.730	1.730	2d
Farnell	2	IRF1010ZPBF	289	1		3.202*	2.063*	1.474*	1.474*	1.474*	2h
Mouser		942-IRF1010ZPBF	613	1	Tube	2.780	1.790	1.280	0.928	0.928
Microchip USA	2	IRF1010ZPBF	330	3K	Tube					0.734	5d

Inventory History

3 month trend: -0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1010ZPBF.

IHS

Datasheet13 pages15 years ago

Datasheet12 pages15 years ago

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF1010ZPBF

InfineonAUIRF1010Z

Price @ 1000

$ 0.928

$ 1.04

Stock

443,216

98,148

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

94 A

Threshold Voltage

2 V

Rds On Max

7.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.84 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

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Descriptions

Descriptions of Infineon IRF1010ZPBF provided by its distributors.

Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

Infineon

MOSFET, N, 55V, 94A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC