Infineon AUIRF4905
$ 2.408
Obsolete
Inventory History
3 month trend: -37.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.408
$ 0.956
Stock
210,210
2,051,482
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
74 A
74 A
Threshold Voltage
-2 V
-4 V
Rds On Max
20 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
150 W
Input Capacitance
3.4 nF
3.4 nF
Supply Chain
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Related Parts
InfineonIRF4905PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;TO-220AB;PD 200W;VGS +/-20V
InfineonIRF3205ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de
Descriptions
Descriptions of Infineon AUIRF4905 provided by its distributors.
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package
Single P-Channel 55 V 0.02 Ohm 180 nC Automotive HEXFET® Power Mosfet - TO-220-3
Trans MOSFET P-CH 55V 74A Automotive 3-Pin(3+Tab) TO-220AB Tube
TUBE / Automotive 55V 64.000A TO-220; TUBE / Automotive 55V 64.000A TO-220
MOSFET P-Channel 55V 74A HEXFET TO220AB
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -37.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)74 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
PackagingRail/Tube
Power Dissipation200 W
Rds On Max20 mΩ
Rise Time99 ns
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time61 ns
Turn-On Delay Time18 ns
Dimensions
Height16.5 mm
Length10.66 mm
Width4.82 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance Statements