Infineon IRF3709PBF

Name: Infineon IRF3709PBF
Brand: Infineon
SKU: IRF3709PBF

Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB

$ 0.6

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF3709PBF	2,642					0.723	0.600	0.535	2h
RS (Formerly Allied Electronics)		IRF3709PBF	0	3K	Bulk					2.372	15h
Farnell		IRF3709PBF	0	1		1.647*	1.239*	1.165*	0.941*	0.941*	2h
HQonline		DS0081064	341	100				1.207	1.002	0.819	>1w
Microchip USA	2	IRF3709	296	600	Tray				1.167	1.167	7d

Inventory History

3 month trend: -14.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3709PBF.

IHS

Datasheet13 pages21 years ago

Datasheet12 pages21 years ago

Datasheet12 pages25 years ago

DigiKey

iiiC

Inventory History

3 month trend:

-14.29%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-02-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

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Descriptions

Descriptions of Infineon IRF3709PBF provided by its distributors.

Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB

Win Source

Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 90A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC