Infineon IRL8113PBF

Name: Infineon IRL8113PBF
Brand: Infineon
SKU: IRL8113PBF

MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free

$ 2.38

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRL8113PBF	0	5	Bulk		2.700	2.380	2.380	2.380	23h
Farnell		IRL8113PBF	0	5			1.546*	1.087*	0.762*	0.747*	9h
Microchip USA		IRL8113	200	600	Tube				1.613	1.613	3d
Component Stockers USA		IRL8113PBF	76			0.350	0.350	0.350	0.350	0.350	>1wk
Win Source	2	WS-IRL8113	20	40				1.320	1.073	1.073	11h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL8113PBF.

Newark

Datasheet13 pages21 years ago

Datasheet12 pages21 years ago

IHS

Farnell

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRL8113PBF provided by its distributors.

MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free

RS (Formerly Allied Electronics)

Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 105A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

Infineon

N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V

element14 APAC