Infineon IRF2805PBF

Name: Infineon IRF2805PBF
Brand: Infineon
SKU: IRF2805PBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 3.9MILLIOHMS; Id 175A; TO-220AB; Pd 330W; -55DE

$ 1.111

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRF2805PBF	34	50				0.865	0.825	0.825	2d
Newark		IRF2805PBF	52	1		3.260	1.840	1.570	1.430	1.430
Future Electronics	2	IRF2805PBF	2,949	50	Tube			1.080	1.050	1.020
Arrow Electronics	3	IRF2805PBF	11,604	1		1.543	1.543	1.278	1.111	0.999
Rutronik		TMOSP11731	1,000	50				0.895	0.716	0.716	23h

Inventory History

3 month trend: +40.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2805PBF.

IHS

Datasheet9 pages15 years ago

Datasheet12 pages15 years ago

Newark

Future Electronics

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+40.13%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF2805PBF

InfineonAUIRF2805

Price @ 1000

$ 1.111

$ 1.54

Stock

825,002

104,120

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

4.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

330 W

Input Capacitance

5.11 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-08-08

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF2805PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 55 V, 175 A, 0.0047 ohm, TO-220AB, Through Hole

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 330 W

Distrelec

Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 55V, 175A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:4.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:700A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon