Infineon IRF1405ZPBF

Name: Infineon IRF1405ZPBF
Brand: Infineon
SKU: IRF1405ZPBF

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

$ 1.431

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF1405ZPBF	3,123	1		3.284	1.868	1.726	1.522	1.522
Rochester Electronics	2	IRF1405ZPBF	14,211					1.370	1.220	1.150	23h
DigiKey		IRF1405ZPBF-ND	601	1	Tube	4.330	4.330	2.003	1.643	1.643
RS (Formerly Allied Electronics)		IRF1405ZPBF	0	50	Bulk			2.520	2.270	2.270	14h
Farnell	2	IRF1405ZPBF	61	1		4.487*	2.297*	2.297*	2.297*	2.297*	23h

Inventory History

3 month trend: +3.64%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1405ZPBF.

Farnell

Datasheet12 pages15 years ago

IHS

Newark

_legacy Avnet

iiiC

Inventory History

3 month trend:

+3.64%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-03-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRF1405ZPBF provided by its distributors.

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:150A; On Resistance Rds(On):0.0049Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230

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