Infineon IRF130
$ 18.605
Production
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 18.605
$ 27.405
Stock
14,405
8,368
Authorized Distributors
3
2
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
75 W
75 W
Input Capacitance
-
-
Related Parts
InfineonJANTX2N6756
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descriptions
Descriptions of Infineon IRF130 provided by its distributors.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
IRF130 Series 100 V 0.18 Ohm 12 nC Through Hole N-Channel Power MOSFET - TO-3
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-204AE
45 A 100 V 0.21 ohm N-CHANNEL Si POWER MOSFET TO-3
HEXFET, Hi-Rel 100V, 14A, 0.180 ohm
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
N CH MOSFET, 100V, 14A, TO-204AA; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Power Dissipation75 W
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time60 ns
Turn-On Delay Time35 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Compliance
Environmental Classification
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance Statements