Infineon IRF240

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3

Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:200V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No

MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:200V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-204AA; No. of Pins:2Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:450mJ; Current Iar:18A; Current Id Max:18A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:72A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.012kg