Infineon IRF140
$ 18.01
Production
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IRF140 provided by its distributors.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; On Resistance Rds(On):0.089Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:100V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (18-Jun-2012); Current Id Max:28A; Current Temperature:25°C; Device Marking:IRF140; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance89 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance100 mΩ
Power Dissipation125 W
Schedule B8541290080
TerminationThrough Hole
Dimensions
Lead Pitch11 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance Statements