Infineon IPI80N06S4L07AKSA2

Name: Infineon IPI80N06S4L07AKSA2
Brand: Infineon
SKU: IPI80N06S4L07AKSA2

MOSFET N-CH 60V 80A TO262-3 / N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1

$ 0.938

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPI80N06S4L07AKSA2	10,617					1.020	0.847	0.755	16h
Mouser		726-IPI80N06S4L07AKS	40	1	Tube	2.980	1.930	1.420	1.030	1.030
Microchip USA		IPI80N06S4L07AKSA2	222	600	Bulk				1.016	1.016	3d
Verical	4	IPI80N06S4L07AKSA2	2,880	295					1.058	0.944
Component Stockers USA		IPI80N06S4L07AKSA2	12,172			0.840	0.840	0.790	0.720	0.720	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages17 years ago

Inventory History

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-03-24

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-12-01

LTD Date2017-06-01

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Descriptions

Descriptions of Infineon IPI80N06S4L07AKSA2 provided by its distributors.

MOSFET N-CH 60V 80A TO262-3 / N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1

Win Source

60V, N-Ch, 6.4 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 80A I(D), 60V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon