Infineon IPI80N06S207AKSA2

Name: Infineon IPI80N06S207AKSA2
Brand: Infineon
SKU: IPI80N06S207AKSA2

55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS

$ 0.801

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IPI80N06S207AKSA2	15,365					1.500	1.340	1.260	8h
Microchip USA	2	IPI80N06S207AKSA2	343	600	Bulk				1.584	1.584	3h
Verical	4	IPI80N06S207AKSA1	600	311					1.002	0.893
Component Stockers USA		IPI80N06S207AKSA2	9,316			1.690	1.690	1.590	1.440	1.440	2d
Win Source	2	WS-IPI80N06S207AKSA2	8,600	7			9.476	6.318	6.318	6.318	10h

Inventory History

3 month trend: Restocked

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPI80N06S207AKSA2.

IHS

Datasheet8 pages15 years ago

iiiC

Inventory History

3 month trend:

Restocked

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-08-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPI80N06S207AKSA2 provided by its distributors.

55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS

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Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube

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Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon