Infineon IKW40N65WR5XKSA1

Name: Infineon IKW40N65WR5XKSA1
Brand: Infineon
SKU: IKW40N65WR5XKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

$ 1.444

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Arrow Electronics	2	IKW40N65WR5XKSA1	240	1		1.555	1.555	1.555	1.555	1.555
DigiKey		IKW40N65WR5XKSA1-ND	240	1	Tube	3.910	3.910	2.140	1.460	1.215
Newark		IKW40N65WR5XKSA1	0	1		4.450	3.030	2.520	1.990	1.990
Avnet		IKW40N65WR5XKSA1	0	480					1.439	1.298	2d
Farnell		IKW40N65WR5XKSA1	0	1		5.321*	2.890*	2.134*	1.567*	1.567*	6h

Inventory History

3 month trend: -15.87%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKW40N65WR5XKSA1.

IHS

Datasheet15 pages0 years ago

TME

Inventory History

3 month trend:

-15.87%

CAD Models

Download Infineon IKW40N65WR5XKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-05-12

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Related Parts

InfineonIHW40N65R5XKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

Details

InfineonIHW50N65R5XKSA1

IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3

Details

InfineonIKW75N65ES5XKSA1

IKW75N65ES5: 650 V 80 A TRENCHSTOPTM 5 Soft Switching IGBT - PG-TO247-3

Details

onsemiFGH40N65UFDTU

Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube

Details

onsemiNGTB40N65FL2WG

Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

Details

onsemiFGH40T65UPD

Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube

Details

Descriptions

Descriptions of Infineon IKW40N65WR5XKSA1 provided by its distributors.

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

650 V, 40 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 650V 80A 230W 3-Pin(3+Tab) TO-247 Tube

Verical

IGBT Trench 650 V 80 A 230 W Through Hole PG-TO247-3

Win Source

230W 1.4V 650V 80mA TO-247 , 15.94mm*502cm*20.95mm

UnikeyIC

80A 650V TO-247-3 IGBT Transistors / Modules ROHS

EBEE

Infineon IKW40N65WR5XKSA1 IGBT 650 V PG-TO247-3

TodayComponents

Infineon IGBT Transistor IKW40N65WR5

RS APAC

IKW40N65 - 650V, 40A IGBT WITH A

DigiKey Marketplace

Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.4V; Power Dissipation:230W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW40N65WR5XKSA1

Newark

High speed 650 V, 40 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ 5 WR5 IGBT features an optimized diode that is adequately rated for the target application. WR5 is recommended for use in the PFC stage in air conditioning, DC/DC in welding, AC/DC in UPS and MPPT in solar string inverters. The excellent price/performance ratio of WR5 IGBT allows access to the high-performance technology also for cost sensitive customers.

Infineon