Infineon IGP30N65H5XKSA1

Name: Infineon IGP30N65H5XKSA1
Brand: Infineon
SKU: IGP30N65H5XKSA1

Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, TO-220AB

$ 0.979

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min
Rochester Electronics		IGP30N65H5XKSA1	7,340				1.180	0.979	0.873	15h
Avnet		IGP30N65H5XKSA1	0	500						4d
Farnell		IGP30N65H5XKSA1	0	500				0.994*	0.994*	15h
Verical	3	IGP30N65H5XKSA1	280	255				1.224	1.092
Component Stockers USA		IGP30N65H5XKSA1	4,894		2.310	2.310	1.630	1.290	1.290	7d

Inventory History

3 month trend: -24.24%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IGP30N65H5XKSA1.

TME

Datasheet14 pages0 years ago

Inventory History

3 month trend:

-24.24%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-06-11

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

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Descriptions

Descriptions of Infineon IGP30N65H5XKSA1 provided by its distributors.

Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, TO-220AB

IHS

Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube

Verical

188W 1.65V 650V 55mA TO-220 , 10mm*440cm*9.25mm

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IGP40N65 - DISCRETE IGBT WITHOUT

DigiKey Marketplace

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Infineon

Igbt, Single, 650V, 55A, To-220; Dc Collector Current:55A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGP30N65H5XKSA1

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