Infineon FZ900R12KP4HOSA1

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel

1200 V, 900 A 62mm C-Series module with Trench/Fieldstop IGBT4

Our well-known 62 mm 1200 V single switch IGBT modules with IGBT4 are the right choice for your design, AG-62MM-2, RoHS

IGBT MODULE, 1.2KV, 900A, MODULE;

Igbt, 1.2Kv, 900A, Module; Continuous Collector Current:900A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FZ900R12KP4HOSA1

Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding