Infineon FF150R17KE4HOSA1

IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
$ 80.425
Production
Manufacturer PageDatasheet

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FF150R17KE4HOSA1.

Infineon

Datasheet1 page14 years ago

IHS

Newark

iiiC

_legacy Avnet

Inventory History

3 month trend:
+28.57%
Powered bySpectra logo

CAD Models

Download Infineon FF150R17KE4HOSA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-18
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Related Parts

InfineonBSM100GB170DLC
Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel
Details
MicrochipAPTGT50SK170T1G
Trans IGBT Module N-CH 1700V 75A 312000mW 12-Pin Case SP-1 Tube
Details
InfineonFS150R12PT4BOSA1
Infineon FS150R12PT4BOSA1 IGBT Module, 200 A 1200 V Module, Panel Mount
Details
InfineonBSM200GA120DN2
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel
Details
MicrochipAPTGT50A170T1G
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT50A170T1G
Details
MicrochipAPTGT100DU170TG
Pm-Igbt-Tfs-Sp4 Rohs Compliant: Yes |Microchip Technology APTGT100DU170TG
Details

Descriptions

Descriptions of Infineon FF150R17KE4HOSA1 provided by its distributors.

IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
Newark
Trans IGBT Module N-CH 1700V 150A 1100000mW 7-Pin 62MM-1 Tray
Verical
Transistor IGBT Module N-CH 1700V 150A 20V Screw Mount Tray
Avnet
1700 V dual IGBT module, AG-62MM-1-7, RoHS
Infineon SCT
IGBT, 1700V, 150A, AG-62MMHB-411
Future Electronics
Insulated Gate Bipolar Transistor
IHS
IGBT MODULE, DUAL NPN, 1.95V, 150A; Transistor Polarity: Dual NPN; DC Collector Current: 250A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 1.1kW; Collector Emitter Voltage V(br)ceo: 1.7kV; Trans
Farnell
Our well-known 62 mm 1700V dual IGBT modules are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low V CEsat; Unbeatabel Robustness; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar; traction
Infineon

Images

element14 APAC
iiiC

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • FF150R17 KE4
  • FF150R17KE4
  • SP000713524