Infineon BSM35GD120DN2E3224
Obsolete
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Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSM35GD120DN2E3224.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-10-15
LTD Date2024-04-15
Related Parts
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MicrochipAPTGT35A120T1G
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT35A120T1G
MicrochipAPTGT35H120T3G
Pm-Igbt-Tfs-Sp3F Rohs Compliant: Yes |Microchip Technology APTGT35H120T3G
Descriptions
Descriptions of Infineon BSM35GD120DN2E3224 provided by its distributors.
IGBT POWER MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Trans IGBT Module N-CH 1.2KV 50A 17-Pin ECONOPACK 2 T/R
IGBT 35A 1200V SIX-PACK SHORT PINS
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageModule
MountScrew
Number of Pins17
Number of Terminals17
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current50 A
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Operating Temperature-40 °C
Number of Elements6
Power Dissipation280 W
Dimensions
Height17 mm
Length107.5 mm
Width45 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSM35GD120DN2E3224.