Infineon BSM200GB120DLC

Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel
Obsolete

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSM200GB120DLC.

IHS

Datasheet8 pages18 years ago
Datasheet8 pages21 years ago

Elcodis

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-09-30
LTD Date2024-06-30

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Descriptions

Descriptions of Infineon BSM200GB120DLC provided by its distributors.

Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel
IGBT Modules 1200V 200A DUAL
INFINEON IGBT Module
BSM 200GB 120DLC
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 22 mJ Energy dissipation during turn-off time: 23 mJ

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSM 200GB 120DLC