Infineon BSC009NE2LSATMA1
$ 0.73
Production
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Inventory History
3 month trend: -0.37%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSC009NE2LSATMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
Descriptions
Descriptions of Infineon BSC009NE2LSATMA1 provided by its distributors.
25 V N-CHANNEL POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LOW
2.5W 20V 2.2V 72nC@ 4.5V，126nC@ 10V 1individualNChannel 25V 900μΩ@ 10V 5.8nF@ 12V Bracket mounting，SMD mount 5.15mm*5.9mm*1mm
With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.
Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Power Dissipation:2.5W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC009NE2LSATMA1.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.37%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.8 nF
Max Dual Supply Voltage25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance900 µΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rise Time33 ns
Schedule B8541290080
Turn-Off Delay Time48 ns
Turn-On Delay Time10 ns
Dimensions
Height1 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSC009NE2LSATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Compliance Statements