Infineon AUIRF1010Z

Name: Infineon AUIRF1010Z
Brand: Infineon
SKU: AUIRF1010Z

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

$ 1.04

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	AUIRF1010Z	12,418					1.250	1.040	0.925	5h
RS (Formerly Allied Electronics)		AUIRF1010Z	0	450	Bulk				5.130	4.620	2d
Farnell		AUIRF1010Z	0	1		1.138*	1.138*	1.138*	1.138*	1.138*	1d
Microchip USA		AUIRF1010Z	424	300	Bulk				6.435	6.435	5d
Verical		AUIRF1010Z	3,650	240					1.300	1.156

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF1010Z.

Upverter

Datasheet13 pages8 years ago

IHS

element14 APAC

TME

Inventory History

3 month trend:

+0.00%

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF1010Z

InfineonIRF1010ZPBF

Price @ 1000

$ 1.04

$ 0.928

Stock

112,214

448,749

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

94 A

75 A

Threshold Voltage

2 V

Rds On Max

7.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.84 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-02-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-11-15

LTD Date2021-05-15

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Descriptions

Descriptions of Infineon AUIRF1010Z provided by its distributors.

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

Infineon SCT

INFINEON AUIRF1010Z MOSFET Transistor, N Channel, 75 A, 55 V, 5.8 mohm, 10 V, 2 V

Jak Electronics

AUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, TO-220

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 55V 94A 3-Pin(3+Tab) TO-220AB Tube

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N CH, 55V, 94A, TO220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:94A; Power Dissipation Pd:140W; Voltage Vgs Max:20V

element14 APAC

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon