Descriptions of Diodes Inc. ZXMN4A06K provided by its distributors.
Trans MOSFET N-CH 40V 10.9A Automotive 3-Pin(2+Tab) DPAK
Power Field-Effect Transistor, 10.9A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:7.2A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:DPAK; Termination ;RoHS Compliant: Yes
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:7.2A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Application Code:GPSW; Current, Idm Pulse:35.3A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd 50mm sq PCB:4.2W; Resistance, Rds on Max:0.05ohm; SMD Marking:ZXMN 4A06; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:10.9ns; Time, Rise:3.8ns; Time, trr Typ:16ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Min:1V; Width, External:6.8mm