Diodes Inc. ZXMC3A16DN8TA

Name: Diodes Inc. ZXMC3A16DN8TA
Brand: Diodes Inc.
SKU: ZXMC3A16DN8TA

Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8

$ 0.679

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Distributor		SKU		Min	Pkg
DigiKey	2	ZXMC3A16DN8CT-ND	21,508	1	Cut Tape	2.370	1.517	1.030	1.030	1.030
TME	2	ZXMC3A16DN8TA	0	1		1.920	1.227	0.810	0.667	0.667	21h
RS (Formerly Allied Electronics)		ZXMC3A16DN8TA	0	5	Bulk		2.000	1.760	1.760	1.760	13h
Avnet		ZXMC3A16DN8TA	0	500					0.506	0.494	2h
Future Electronics		ZXMC3A16DN8TA	0	500	Tape & Reel				0.765	0.740

Inventory History

3 month trend: -9.33%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZXMC3A16DN8TA.

IHS

Datasheet10 pages19 years ago

element14 APAC

Diodes Inc SCT

Future Electronics

iiiC

Inventory History

3 month trend:

-9.33%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-06-07

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. ZXMC3A16DN8TA provided by its distributors.

Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 30V 6.4A/5.5A 8-Pin SOIC T/R

Avnet

Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id P Channel:5.4A; Continuous Drain Current Id, N Channel:6.4A; Continuous Drain Current Id, P Channel:-5.4A; Current Id Max:6.4A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.035ohm; On Resistance Rds(on), P Channel:0.048ohm; On State Resistance N Channel Max:35mohm; On State Resistance P Channel Max:48mohm; Package / Case:SOIC; Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W

element14 APAC