Infineon IRF7319PBF

Name: Infineon IRF7319PBF
Brand: Infineon
SKU: IRF7319PBF

Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

$ 0.613

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF7319PBF	72					0.356	0.295	0.263	7h
RS (Formerly Allied Electronics)	IRF7319PBF	0	1	Bulk	1.030	0.930	0.930	0.930	0.930	2d
Farnell	IRF7319PBF	0	5			0.925*	0.635*	0.444*	0.434*	2h
Win Source	WS-IRF7319PBF	14,980	95				0.531	0.412	0.412	8h
Worldway Electronics	IRF7319PBF	10,780	7	Tube		0.096	0.093	0.088	0.088	7h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7319PBF.

IHS

Datasheet11 pages21 years ago

Datasheet10 pages21 years ago

element14 APAC

TME

iiiC

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-08-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7319PBF provided by its distributors.

Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC Tube

Verical

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.5A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.5A; Cont Current Id P Channel:4.9A; Current Id Max:6.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:30A; Pulse Current Idm P Channel:30A; Row Pitch:6.3mm; SMD Marking:F7319; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

element14 APAC