Diodes Inc. DMN6068SE-13
$ 0.318
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -38.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN6068SE-13.
CAD Models
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Related Parts
Diodes Inc.ZXMP6A17GTA
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
Descriptions
Descriptions of Diodes Inc. DMN6068SE-13 provided by its distributors.
N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N-CH, 60V, 4.1A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -38.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Terminals4
Weight7.994566 mg
Technical
Continuous Drain Current (ID)4.1 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time8.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance502 pF
Max Operating Temperature150 °C
Max Power Dissipation3.7 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max68 mΩ
Resistance68 mΩ
Rise Time10.8 ns
Schedule B8541290080
Turn-Off Delay Time11.9 ns
Turn-On Delay Time3.6 ns
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN6068SE-13.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements