Diodes Inc. DMG4N65CTI
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMG4N65CTI.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-08-05
LTD Date2020-02-05
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Descriptions
Descriptions of Diodes Inc. DMG4N65CTI provided by its distributors.
Trans MOSFET N-CH 650V 4A Automotive 3-Pin(3+Tab) ITO-220AB Tube
MOSFET N-CH 650V 4A ITO-220AB
Power Field-Effect Transistor, 4A I(D), 650V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.299997 g
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)650 V
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation8.35 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max3 Ω
Rise Time13.8 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time15.1 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMG4N65CTI.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements