onsemi FQPF5N60C

Name: onsemi FQPF5N60C
Brand: onsemi
SKU: FQPF5N60C

Power Mosfet, N-channel, Qfet®, 600 V, 4.5 A, 2.5 Ω, TO-220F

$ 0.581

EOL

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Distributor		SKU		Min
Verical	4	FQPF5N60C	61	4		0.853	0.683	0.602	0.602
Arrow Electronics	2	FQPF5N60C	61	1	1.100	0.853	0.757	0.757	0.757
Rochester Electronics		FQPF5N60C	22,319				0.700	0.581	0.518	7h
Flip Electronics		FQPF5N60C	3,214							6d
Avnet		FQPF5N60C	0	1516					0.508	4d

Inventory History

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CAD Models

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Alternate Parts

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Datasheets & Documents

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Newark

Datasheet0 pages0 years ago

Upverter

IHS

onsemi

element14 APAC

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-07-25

Lifecycle StatusEOL (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FQPF5N60C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F

onsemi

Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube

Verical

600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.5ohm; Rds(on) Test V; Available until stocks are exhausted Alternative available

Farnell

Mosfet, N, To-220F; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):2.5Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Onsemi FQPF5N60C.

Newark

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor