onsemi NGTB40N120FL2WG

Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current80 A
Element ConfigurationSingle
Max Collector Current80 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation535 W
Min Operating Temperature-55 °C
Power Dissipation535 W
Reverse Recovery Time240 ns
Schedule B8541290080
Turn-Off Delay Time286 ns
Turn-On Delay Time116 ns
Dimensions
Height21.4 mm
Length16.25 mm
Width5.3 mm

Documents

Download datasheets and manufacturer documentation for onsemi NGTB40N120FL2WG.

onsemi
Datasheet10 pages9 years ago
Datasheet10 pages9 years ago

Inventory History

3 month trend:
-92.71%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi NGTB40N120FL2WG.

Related Parts

Descriptions

Descriptions of onsemi NGTB40N120FL2WG provided by its distributors.

Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
IGBT Transistors 1200V/40A FAST IGBT FSII
TRANSISTOR, IGBT, 2V, 80A, TO-247-3
IGBT TRENCH/FS 1200V 80A TO247
Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB40N120FL2WG

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current80 A
Element ConfigurationSingle
Max Collector Current80 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation535 W
Min Operating Temperature-55 °C
Power Dissipation535 W
Reverse Recovery Time240 ns
Schedule B8541290080
Turn-Off Delay Time286 ns
Turn-On Delay Time116 ns
Dimensions
Height21.4 mm
Length16.25 mm
Width5.3 mm

Documents

Download datasheets and manufacturer documentation for onsemi NGTB40N120FL2WG.

onsemi
Datasheet10 pages9 years ago
Datasheet10 pages9 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago