onsemi NDS351AN
EOL
In StockTechnical Specifications
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.4 A
Current Rating1.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance145 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max160 mΩ
Resistance160 MΩ
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.22 mm
Width3.05 mm
Inventory History
3 month trend: -9.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi NDS351AN.
TME
Upverter
Future Electronics
onsemi
Fairchild Semiconductor
iiiC
Newark
Supply Chain
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi NDS351AN.
Related Parts
onsemiNDS351N
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ
onsemiFDN352AP
P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ
onsemiNDS352AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ
Descriptions
Descriptions of onsemi NDS351AN provided by its distributors.
N-Channel Logic Level PowerTrench® MOSFET 30V, 1.4A, 160mΩ
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.25ohm; Rds(on) Test V; Available until stocks are exhausted Alternatives available
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:NDS351AN; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS351AN; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -9.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.4 A
Current Rating1.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance145 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max160 mΩ
Resistance160 MΩ
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.22 mm
Width3.05 mm
Documents
Download datasheets and manufacturer documentation for onsemi NDS351AN.
TME
Upverter
Future Electronics
onsemi
Fairchild Semiconductor
iiiC
Newark
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements