NXP Semiconductors MRFE6VP5600HR5
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6VP5600HR5CT-ND | 71 | 1 | Cut Tape | 2d | ||||||||
| 841-MRFE6VP5600HR5 | 28 | 1 | Tape & Reel | 2d | ||||||||
| MRFE6VP5600HR5 | 0 | 50 | 1d | |||||||||
| MRFE6VP5600HR5 | 0 | 50 | 1d | |||||||||
| 5076118 | 0 | 50 | Tape & Reel | 9h |
Technical Specifications
Physical
Contact PlatingGold
MountScrew, Surface Mount
Number of Pins5
Weight13.155199 g
Technical
Drain to Source Voltage (Vdss)130 V
Frequency230 MHz
Gain25 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.667 kW
Min Breakdown Voltage130 V
Min Operating Temperature-65 °C
Number of Elements2
Output Power600 W
Test Current100 mA
Test Voltage50 V
Voltage Rating130 V
Inventory History
3 month trend: +124%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP5600HR5.
NXP Semiconductors SCT
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP5600HR5.
Related Parts
NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VP6300HR3
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VP6300HSR3
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Descriptions
Descriptions of NXP Semiconductors MRFE6VP5600HR5 provided by its distributors.
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS
NXP Semiconductors SCT
FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
Tape & Reel (TR) N-CHANNEL COMMON SOURCE 2ELEMENTS EAR99 RF Mosfet 100mA 600W 25dB 230MHz
MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230
TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; O; Available until stocks are exhausted Alternative available
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: +124%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingGold
MountScrew, Surface Mount
Number of Pins5
Weight13.155199 g
Technical
Drain to Source Voltage (Vdss)130 V
Frequency230 MHz
Gain25 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.667 kW
Min Breakdown Voltage130 V
Min Operating Temperature-65 °C
Number of Elements2
Output Power600 W
Test Current100 mA
Test Voltage50 V
Voltage Rating130 V
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP5600HR5.
NXP Semiconductors SCT