NXP Semiconductors MRFE6VP6300HR5
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6VP6300HR5 | 48 | 1 | 19h | |||||||||
| MRFE6VP6300HR5CT-ND | 40 | 1 | Cut Tape | 2d | ||||||||
| MRFE6VP6300HR5 | 801 | 1 | 1d | |||||||||
| 31AC6675 | 108 | 1 | Cut Tape | 19h | ||||||||
| C1S537101501991 | 48 | 1 | Cut Tape | 22h |
Technical Specifications
Physical
Contact PlatingGold
MountScrew, Surface Mount
Number of Pins780
Weight6.395794 g
Technical
Continuous Drain Current (ID)100 mA
Drain to Source Breakdown Voltage130 V
Drain to Source Voltage (Vdss)130 V
Frequency230 MHz
Gain26.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Junction Temperature (Tj)225 °C
Max Operating Temperature225 °C
Max Power Dissipation1.05 kW
Min Breakdown Voltage125 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements2
Output Power300 W
Power Dissipation1.05 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating130 V
Dimensions
Height4.32 mm
Inventory History
3 month trend: +219%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP6300HR5.
Future Electronics
Upverter
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP6300HR5.
Related Parts
NXP SemiconductorsMRFE6VP5600HR5
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
NXP SemiconductorsMRFE6VP5600HR6
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
NXP SemiconductorsMRFE6VP5600HSR5
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Descriptions
Descriptions of NXP Semiconductors MRFE6VP6300HR5 provided by its distributors.
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS
NXP Semiconductors SCT
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: +219%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingGold
MountScrew, Surface Mount
Number of Pins780
Weight6.395794 g
Technical
Continuous Drain Current (ID)100 mA
Drain to Source Breakdown Voltage130 V
Drain to Source Voltage (Vdss)130 V
Frequency230 MHz
Gain26.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Junction Temperature (Tj)225 °C
Max Operating Temperature225 °C
Max Power Dissipation1.05 kW
Min Breakdown Voltage125 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements2
Output Power300 W
Power Dissipation1.05 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating130 V
Dimensions
Height4.32 mm
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP6300HR5.
Future Electronics
Upverter