onsemi MMBTA13LT1G
Production
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Weight1.437803 g
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current300 mA
Current Rating300 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min5000
Max Breakdown Voltage30 V
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency125 MHz
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Inventory History
3 month trend: -59.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.033
$ 0.04
Stock
2,270,945
1,599,614
Authorized Distributors
11
10
Mount
-
Surface Mount
Case/Package
SOT-23-3
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
300 mA
300 mA
Transition Frequency
125 MHz
125 MHz
Collector Emitter Saturation Voltage
1.5 V
1.5 V
hFE Min
5000
5000
Power Dissipation
225 mW
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBTA13LT1G.
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onsemiMMBTA14LT1G
MMBTA14LT1G On Semiconductor BJT Transistor Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R RoHS
Descriptions
Descriptions of onsemi MMBTA13LT1G provided by its distributors.
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBTA13L Series 30 V 300 mA NPN Darlington Amplifier Transistor - SOT-23-3
Trans Darlington NPN 30V 0.3A 300mW Automotive 3-Pin SOT-23 T/R
10000@5V,100mA 30V NPN 300mA 225mW SOT-23(TO-236) Darlington Transistors ROHS
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:10K SOT23 | ON Semiconductor MMBTA13LT1G
300 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
DARLINGTON NPN, 300 mA, 30 V, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:30V RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -59.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Weight1.437803 g
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current300 mA
Current Rating300 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min5000
Max Breakdown Voltage30 V
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency125 MHz
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements