onsemi KSH122TF
Obsolete
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage100 V
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.75 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.75 W
Voltage Rating (DC)100 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi KSH122TF.
Fairchild Semiconductor
TME
Farnell
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.222
$ 0.451
Stock
469,338
436,844
Authorized Distributors
2
11
Mount
Surface Mount
-
Case/Package
DPAK
DPAK
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
8 A
8 A
Transition Frequency
-
4 MHz
Collector Emitter Saturation Voltage
2 V
2 V
hFE Min
100
1000
Power Dissipation
1.75 W
1.75 W
Supply Chain
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi KSH122TF.
Related Parts
onsemiKSH127TF
KSH Series PNP 1.75 W 100 V 8 A SMT Silicon Darlington Transistor - TO-252-3
onsemiMJD122TF
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
onsemiKSH122TM
Transistor,bjt,darlington,npn,100V V(Br)Ceo,8A I(C),to-252 Rohs Compliant: Yes
Descriptions
Descriptions of onsemi KSH122TF provided by its distributors.
KSH Series NPN 1.75 W 100 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK T/R / TRANS NPN DARL 100V 8A DPAK
NPN SILICON DARLINGTON TRANSISTOR Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK;; DARLINGTON TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1.75W; DC Collector Current:8A; DC Current Gain hFE:1000; No. of Pins:3
TRANSISTOR, NPN, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 4V; Continuous Collector Current Ic Max: 8A; Current Ic Continuous a Max: 8A; Current Ic hFE: 8A; Current Icbo: 10mA; Hfe Min: 100; No. of Transistors: 1; Power Dissipation Ptot Max: 20W; Termination Type: Surface Mount Device; Voltage Vcbo: 100V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage100 V
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.75 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.75 W
Voltage Rating (DC)100 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Documents
Download datasheets and manufacturer documentation for onsemi KSH122TF.
Fairchild Semiconductor
TME
Farnell
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements