Vishay IRL640PBF
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)17 A
Current17 A
Current Rating17 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max180 mΩ
Recovery Time470 ns
Resistance180 mΩ
Rise Time83 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: -4.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay IRL640PBF.
Newark
element14 APAC
Future Electronics
TME
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRL640PBF.
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Descriptions
Descriptions of Vishay IRL640PBF provided by its distributors.
Transistor MOSFET N-CH 200V 17A 3-Pin (3+Tab) TO-220AB
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 200V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Junction to Case Thermal Resistance A:1°C/W; On State resistance @ Vgs = 10V:180mohm; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -4.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)17 A
Current17 A
Current Rating17 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max180 mΩ
Recovery Time470 ns
Resistance180 mΩ
Rise Time83 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for Vishay IRL640PBF.
Newark
element14 APAC
Future Electronics
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements