Infineon IRL520NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.18 Ohm; Id 10A; TO-220AB; Pd 48W; Vgs +/-16V
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance440 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
On-State Resistance180 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation48 W
Rds On Max180 mΩ
Recovery Time160 ns
Resistance220 mΩ
Rise Time35 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time4 ns
Voltage Rating (DC)100 V
Dimensions
Height8.77 mm
Length10.5156 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRL520NPBF.

Newark
Datasheet9 pages19 years ago
Datasheet8 pages25 years ago
International Rectifier
Datasheet9 pages25 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet8 pages25 years ago
iiiC
Datasheet9 pages19 years ago
Datasheet9 pages25 years ago
DigiKey
Datasheet8 pages19 years ago

Inventory History

3 month trend:
-23.28%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRL520NPBF.

Related Parts

Descriptions

Descriptions of Infineon IRL520NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 60 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220AB; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:IRL520NPBF; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRL520N
  • IRL520NPBF.
  • SP001558080

Technical Specifications

Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance440 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
On-State Resistance180 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation48 W
Rds On Max180 mΩ
Recovery Time160 ns
Resistance220 mΩ
Rise Time35 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time4 ns
Voltage Rating (DC)100 V
Dimensions
Height8.77 mm
Length10.5156 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRL520NPBF.

Newark
Datasheet9 pages19 years ago
Datasheet8 pages25 years ago
International Rectifier
Datasheet9 pages25 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet8 pages25 years ago
iiiC
Datasheet9 pages19 years ago
Datasheet9 pages25 years ago
DigiKey
Datasheet8 pages19 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago