Infineon IRF7478TRPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 20 Milliohms; Id 7A; SO-8; Pd 2.5W; Vgs +/-20V
NRND

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max26 mΩ
Resistance26 MΩ
Rise Time2.6 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time44 ns
Turn-On Delay Time7.7 ns
Voltage Rating (DC)60 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7478TRPBF.

Farnell
Datasheet8 pages19 years ago
_legacy Avnet
Datasheet8 pages0 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages19 years ago
iiiC
Datasheet8 pages19 years ago

Alternate Parts

Price @ 1000
$ 0.416
$ 0.416
Stock
856,892
366,512
366,512
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
7 A
7 A
7 A
Threshold Voltage
3 V
-
-
Rds On Max
26 mΩ
28 mΩ
28 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.74 nF
1.107 nF
1.107 nF

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF7478TRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRF7478TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 60 V 30 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:7.6A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
MOSFET, N CH, 60V, 7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF7478TRPBF.
  • SP001563530

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max26 mΩ
Resistance26 MΩ
Rise Time2.6 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time44 ns
Turn-On Delay Time7.7 ns
Voltage Rating (DC)60 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7478TRPBF.

Farnell
Datasheet8 pages19 years ago
_legacy Avnet
Datasheet8 pages0 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages19 years ago
iiiC
Datasheet8 pages19 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago