Infineon IRF7425PBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70017584 | 0 | 5 | Bulk | 1d | ||||||||
| 159943-IRF7425PBF | 30,000 | 10 | 3d | |||||||||
| IRF7425PBF | 18 | 1d | ||||||||||
| IRF7425PBF | 115,438 | 7 | Tape & Reel | 1d | ||||||||
| IRF7425PBF | 37,184 | 10 | 2d |
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-15 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance7.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
On-State Resistance8.2 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max8.2 mΩ
Recovery Time180 ns
Resistance8.2 MΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage-1.2 V
Turn-Off Delay Time230 ns
Turn-On Delay Time13 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7425PBF.
Related Parts
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MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
InfineonIRF7456PBF
Transistor MOSFET N Channel 20 Volt 16 Amp 8-Pin SOIC
onsemiFDS6574A
N-Channel PowerTrench® MOSFET, 20V, 16A, 6mΩ
Descriptions
Descriptions of Infineon IRF7425PBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
Single P-Channel 20 V 8.2 mOhm 87 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, 20V, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:4.5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-15 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance7.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
On-State Resistance8.2 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max8.2 mΩ
Recovery Time180 ns
Resistance8.2 MΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage-1.2 V
Turn-Off Delay Time230 ns
Turn-On Delay Time13 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements