Infineon IR2102SPBF

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time50 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current360 mA
Max Power Dissipation625 mW
Max Supply Current270 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current150 µA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current210 mA
Output Voltage620 V
Package Quantity3800
Power Dissipation625 mW
Propagation Delay220 ns
Rise Time100 ns
Schedule B8542310000
Turn-Off Delay Time150 ns
Turn-On Delay Time50 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2102SPBF.

SHENGYU ELECTRONICS
Datasheet14 pages20 years ago
iiiC
Datasheet14 pages20 years ago

Inventory History

3 month trend:
-2.80%

Alternate Parts

Price @ 1000
$ 1.412
$ 1.54
$ 1.54
Stock
270,304
689,016
689,016
Authorized Distributors
16
14
14
Case/Package
SOIC
SOIC
SOIC
Number of Pins
8
8
8
Channel Type
Independent
Independent
Independent
Number of Drivers
2
2
2
Max Output Current
360 mA
360 mA
360 mA
Rise Time
100 ns
100 ns
100 ns
Fall Time
50 ns
50 ns
50 ns
Min Supply Voltage
10 V
10 V
10 V
Max Supply Voltage
20 V
20 V
20 V
Max Power Dissipation
625 mW
625 mW
625 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IR2102SPBF.

Related Parts

Descriptions

Descriptions of Infineon IR2102SPBF provided by its distributors.

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS
Infineon SCT
Tube IR2102SPBF Half-Bridge 1996 gate driver 100ns 125C 210mA 360mA 625mW
Gate Driver IC, Half-Bridge, SOIC-8, IR2102SPBF
Driver 600V 0.36A 2-OUT High and Low Side Inv 8-Pin SOIC N Tube
IR2102 Series 600 V 270 mA 1 W High / Low Side Driver - SOIC-8
HIGH AND LOW SIDE DRIVER, INVERTING INPUTS IN A 8-LEAD SOIC PACKAGE
HIGH AND LOW SIDE DRIVER Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:50ns ;RoHS Compliant: Yes
Type = Half Bridge / Outputs = 2 / Rise Time ns = 100 / Fall Time ns = 50 / Output Current mA = 130 / Output Current mA = 270 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = SOIC-8N / Pins = 8 / Mounting Type = SMD / MSL = Level-2 / Packaging = Tube / Length mm = 5 / Width mm = 4 / Height mm = 1.75 / Reflow Temperature Max. °C = 300
600 V High and Low Side Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs out of phase with inputs or in phase with inputs (IR2101)
IC, MOSFET DRIVER, HIGH/LOW SIDE, SOIC-8; Device Type:Power; Module Configuration:High Side / Low Side; Peak Output Current:360mA; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:160ns; Output Delay:150ns; Operating Temperature Range:-40°C to +125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (18-Jun-2012); Base Number:2102; IC Generic Number:2102; Logic Function Number:2102; Logic IC Function:Independent High & Low Side; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:210mA; Output Sink Current Min:210mA; Output Source Current Min:100mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:90ns; Turn On Time:130ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • SP001543900

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time50 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current360 mA
Max Power Dissipation625 mW
Max Supply Current270 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current150 µA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current210 mA
Output Voltage620 V
Package Quantity3800
Power Dissipation625 mW
Propagation Delay220 ns
Rise Time100 ns
Schedule B8542310000
Turn-Off Delay Time150 ns
Turn-On Delay Time50 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2102SPBF.

SHENGYU ELECTRONICS
Datasheet14 pages20 years ago
iiiC
Datasheet14 pages20 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago