onsemi FQD6N40CTM
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQD6N40CTM | 174 | 1d | ||||||||||
| FQD6N40CTM | 0 | 1 | 1d | |||||||||
| 9160108 | 0 | 2500 | Tape & Reel | 23h | ||||||||
| 512-FQD6N40CTM | 0 | 1 | Tape & Reel | 1d | ||||||||
| FQD6N40CTM | 3,305 | 1K | 3d |
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance830 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max1 Ω
Resistance1 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)400 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Inventory History
3 month trend: +39.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FQD6N40CTM.
Future Electronics
Newark
onsemi
Fairchild Semiconductor
Farnell
Mouser
DigiKey
TME
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQD6N40CTM.
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Descriptions
Descriptions of onsemi FQD6N40CTM provided by its distributors.
N-Channel Power MOSFET, QFET®, 400 V, 4.5 A, 1.0 Ω, DPAK
Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 400V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.83ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +39.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance830 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max1 Ω
Resistance1 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)400 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Documents
Download datasheets and manufacturer documentation for onsemi FQD6N40CTM.
Future Electronics
Newark
onsemi
Fairchild Semiconductor
Farnell
Mouser
DigiKey
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements