onsemi FDV304P
Production
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)460 mA
Current46 A
Current Rating-460 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)-25 V
Dual Supply Voltage-25 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)-8 V
Input Capacitance63 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Nominal Vgs-860 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max1.1 Ω
Resistance1.5 Ω
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-860 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time6 ns
Voltage25 V
Voltage Rating (DC)-25 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Inventory History
3 month trend: +4.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDV304P.
Farnell
element14 APAC
Fairchild Semiconductor
Jameco
iiiC
SOS electronic
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDV304P.
Related Parts
onsemi FDV303N
Transistor, digital FET, N-channel, MOSFET, 25V, 0.68A, 0.35W, SOT-23 | ON Semiconductor FDV303N
onsemi FDV302P
Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23
onsemi FDV301N
Transistor MOSFET N-Ch. 25V 220mA 0,35W 4Ohm SOT23 FDV301N
Descriptions
Descriptions of onsemi FDV304P provided by its distributors.
Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P
Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R
ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount
DIGITAL FET, P-CHANNEL Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
MOSFET, P, -25V, -0.46, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-460mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):1.22ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs:-860mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:500mA; SMD Marking:304P; Tape Width:8mm; Voltage Vds Typ:-25V; Voltage Vgs Max:-860mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +4.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)460 mA
Current46 A
Current Rating-460 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)-25 V
Dual Supply Voltage-25 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)-8 V
Input Capacitance63 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Nominal Vgs-860 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max1.1 Ω
Resistance1.5 Ω
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-860 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time6 ns
Voltage25 V
Voltage Rating (DC)-25 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDV304P.
Farnell
element14 APAC
Fairchild Semiconductor
Jameco
iiiC
SOS electronic
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements