onsemi FDP55N06

N-Channel Power MOSFET, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220
EOL

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation114 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time130 ns
Threshold Voltage2 V
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns
Dimensions
Height20.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDP55N06.

element14 APAC
Datasheet10 pages18 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet0 pages0 years ago
Upverter
Datasheet11 pages9 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet10 pages10 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page16 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
iiiC
Datasheet10 pages18 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago

Supply Chain

Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDP55N06.

Related Parts

Descriptions

Descriptions of onsemi FDP55N06 provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220
N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220
Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
MOSFET, N CH, 60V, 0.018OHM, 55A, TO-220
60V 55A 22m´Î@10V27.5A 114W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 55A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:114W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDP55N06.

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation114 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time130 ns
Threshold Voltage2 V
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns
Dimensions
Height20.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDP55N06.

element14 APAC
Datasheet10 pages18 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet0 pages0 years ago
Upverter
Datasheet11 pages9 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet10 pages10 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page16 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
iiiC
Datasheet10 pages18 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago