STMicroelectronics STP55NF06L
Production
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
Power Dissipation95 W
Rds On Max17 mΩ
Resistance18 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: +1061%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP55NF06L.
Related Parts
STMicroelectronics STP65NF06
N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
STMicroelectronics STP60NF06
N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET
STMicroelectronics STP60NF06L
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET(TM) II Power MOSFET in TO-220 package
Descriptions
Descriptions of STMicroelectronics STP55NF06L provided by its distributors.
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
N-Channel 60 V 18 mOhm STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 55A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +1061%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
Power Dissipation95 W
Rds On Max17 mΩ
Resistance18 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant