onsemi FDC6420C

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.2 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time12 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time10 ns
Dimensions
Height900 µm

Documents

Download datasheets and manufacturer documentation for onsemi FDC6420C.

element14 APAC
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 years ago
Newark
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+40.89%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDC6420C.

Related Parts

Descriptions

Descriptions of onsemi FDC6420C provided by its distributors.

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin SuperSOT T/R
Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDC6420C.

Technical Specifications

Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.2 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time12 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time10 ns
Dimensions
Height900 µm

Documents

Download datasheets and manufacturer documentation for onsemi FDC6420C.

element14 APAC
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 years ago
Newark
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago