Infineon BSS209PWH6327XTSA1

Single P-Channel 20 V 550 mOhm 1 nC OptiMOS™ Small Signal Mosfet - SOT-323
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-630 mA
Current Rating-580 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance379 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time4.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance87 pF
Max Dual Supply Voltage-20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance550 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation300 mW
Rds On Max550 mΩ
Rise Time7 ns
Schedule B8541210080
Turn-Off Delay Time6 ns
Turn-On Delay Time2.6 ns
Voltage Rating (DC)-20 V
Dimensions
Height800 µm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSS209PWH6327XTSA1.

Newark
Datasheet9 pages12 years ago
Burklin Elektronik
Datasheet9 pages12 years ago
TME
Datasheet9 pages12 years ago
iiiC
Datasheet8 pages22 years ago
DigiKey
Datasheet8 pages22 years ago

Inventory History

3 month trend:
+175%

Alternate Parts

Price @ 1000
$ 0.058
$ 0.075
$ 0.075
Stock
7,564,491
945,867
945,867
Authorized Distributors
11
3
3
Mount
Surface Mount
-
-
Case/Package
SOT-323
SOT-323
SOT-323
Drain to Source Voltage (Vdss)
-20 V
-
-
Continuous Drain Current (ID)
-630 mA
-
-
Threshold Voltage
-
-
-
Rds On Max
550 mΩ
-
-
Gate to Source Voltage (Vgs)
12 V
-
-
Power Dissipation
300 mW
-
-
Input Capacitance
87 pF
-
-

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BSS209PWH6327XTSA1.

Related Parts

Descriptions

Descriptions of Infineon BSS209PWH6327XTSA1 provided by its distributors.

Single P-Channel 20 V 550 mOhm 1 nC OptiMOS™ Small Signal Mosfet - SOT-323
MOSFET, P-CH, -20V, -0.63A, SOT-323-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-630mA; Source Voltage Vds:-20V; On
MOSFET, P-CH, -20V, -0.63A, SOT-323-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -630mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.379ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSS209PW
  • BSS209PWH6327XTSA1.
  • SP000750498

Technical Specifications

Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-630 mA
Current Rating-580 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance379 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time4.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance87 pF
Max Dual Supply Voltage-20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance550 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation300 mW
Rds On Max550 mΩ
Rise Time7 ns
Schedule B8541210080
Turn-Off Delay Time6 ns
Turn-On Delay Time2.6 ns
Voltage Rating (DC)-20 V
Dimensions
Height800 µm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSS209PWH6327XTSA1.

Newark
Datasheet9 pages12 years ago
Burklin Elektronik
Datasheet9 pages12 years ago
TME
Datasheet9 pages12 years ago
iiiC
Datasheet8 pages22 years ago
DigiKey
Datasheet8 pages22 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements