STMicroelectronics BD139
Production
Technical Specifications
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight90.718474 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Collector Current1.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Manufacturer Package IdentifierSOT-32-0016114E
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.25 W
Voltage Rating (DC)80 V
Dimensions
Height11.05 mm
Length7.8 mm
Width2.9 mm
Inventory History
3 month trend: -39.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.177
$ 0.306
Stock
1,506,175
411,341
Authorized Distributors
8
10
Mount
Through Hole
-
Case/Package
SOT-32
TO-225
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1.5 A
1.5 A
Transition Frequency
-
-
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
40
25
Power Dissipation
1.25 W
1.25 W
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics BD139.
Descriptions
Descriptions of STMicroelectronics BD139 provided by its distributors.
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
BD139 Series NPN 80 V 1.5 A Complementary Low Voltage Transistor - SOT-32
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Audio Amplifier
Transistor NPN BD139 SGS THOMSON RoHS Ampere=1 TO126
TRANSISTOR, NPN, 80V, 1.5A, SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 250hFE; Transisto
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -39.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight90.718474 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Collector Current1.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Manufacturer Package IdentifierSOT-32-0016114E
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.25 W
Voltage Rating (DC)80 V
Dimensions
Height11.05 mm
Length7.8 mm
Width2.9 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant