Infineon BCP5616H6327XTSA1
NRND
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BCP5616H6327XTSA1 | 30,600 | 19h | ||||||||||
| BCP5616H6327XTSA1 | 11,000 | 204 | Bulk | 15h | ||||||||
| BCP5616H6327XTSA1 | 3,122 | 67 | 15h | |||||||||
| BCP5616H6327XTSA1 | 3,122 | 1 | 15h | |||||||||
| BCP5616H6327XTSA1 | 820 | 5 | 1d |
Technical Specifications
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current1 A
Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min25
Max Collector Current1 A
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Manufacturer Package IdentifierPG-SOT223-4
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity1000
PackagingTape & Reel
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage80 V
Dimensions
Height1.6 mm
Length6.5 mm
Width3.5 mm
Inventory History
3 month trend: +24.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.182
$ 0.095
Stock
258,263
4,715,733
Authorized Distributors
10
9
Mount
Surface Mount
Surface Mount
Case/Package
SOT
SOT-223
Polarity
NPN
-
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
100 MHz
150 MHz
Collector Emitter Saturation Voltage
500 mV
-
hFE Min
25
-
Power Dissipation
2 W
-
Engineering Resources
View Evaluation kits and Reference designs for Infineon BCP5616H6327XTSA1.
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Descriptions
Descriptions of Infineon BCP5616H6327XTSA1 provided by its distributors.
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
BCP 56-16, Bipolar Transistor, NPN 1 A 80 V HFE:25 100 MHz AF Transistor, 4-Pin | Infineon BCP 56-16
NPN Bipolar Transistor, SOT223, RoHS
Infineon SCT
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +24.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current1 A
Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min25
Max Collector Current1 A
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Manufacturer Package IdentifierPG-SOT223-4
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity1000
PackagingTape & Reel
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage80 V
Dimensions
Height1.6 mm
Length6.5 mm
Width3.5 mm