Infineon 2N7002H6327XTSA2

Transistor Mosfet N-ch 60V 0.3A 3-PIN SOT-23 T/r
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)300 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 pF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance3 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max3 Ω
Rise Time3.3 ns
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time5.5 ns
Turn-On Delay Time3 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon 2N7002H6327XTSA2.

Future Electronics
Datasheet9 pages11 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet9 pages9 years ago
Datasheet3 pages7 years ago
Datasheet2 pages7 years ago
iiiC
Datasheet9 pages12 years ago

Inventory History

3 month trend:
+1.07%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon 2N7002H6327XTSA2.

Related Parts

Descriptions

Descriptions of Infineon 2N7002H6327XTSA2 provided by its distributors.

Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
Avnet Japan
MOSFET, N CH, 60V, 0.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:60V; On Resistance
OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 60V, 0.3A, 150Deg C, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Infineon 2N7002H6327XTSA2
Summary of Features: Enhancement mode; Avalanche rated; Normal level, logic level, super logic level or ultra logic level; V GS(th) = 2.1 ... 4.0V; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 500

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • 2N7002
  • 2N7002 H6327
  • 2N7002-H6327
  • 2N7002H6327
  • SP000929182

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)300 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 pF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance3 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max3 Ω
Rise Time3.3 ns
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time5.5 ns
Turn-On Delay Time3 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon 2N7002H6327XTSA2.

Future Electronics
Datasheet9 pages11 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet9 pages9 years ago
Datasheet3 pages7 years ago
Datasheet2 pages7 years ago
iiiC
Datasheet9 pages12 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
RoHSCompliant
Compliance Statements