onsemi 2N5088G

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-92
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min300
Max Collector Current50 mA
Max Frequency50 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency50 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length19.05 mm
Width6.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N5088G.

onsemi
Datasheet5 pages17 years ago
Upverter
Technical Drawing3 pages3 years ago
iiiC
Datasheet5 pages17 years ago

Inventory History

3 month trend:
-98.66%

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi 2N5088G.

Related Parts

Descriptions

Descriptions of onsemi 2N5088G provided by its distributors.

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz
Low Noise NPN Bipolar Transistor, TO-92 30 V, 50 mA
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 30V 0.05A 625mW 3-Pin TO-92 Box
Transistor, NPN, 30V, 0.05A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:50MHz; Power Dissipation
Amplifier Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Collector Emitter Saturation Voltage, Vce(sat):300V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):300; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, 30V, 0.05A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 625mW; DC Collector Current: 50mA; DC Current Gain hFE: 50hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300V; Current Ic Continuous a Max: 50mA; DC Current Gain Hfe Max: 900; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 300; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: General Purpose

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • 2N5088G.

Technical Specifications

Physical
Case/PackageTO-92
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min300
Max Collector Current50 mA
Max Frequency50 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency50 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length19.05 mm
Width6.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N5088G.

onsemi
Datasheet5 pages17 years ago
Upverter
Technical Drawing3 pages3 years ago
iiiC
Datasheet5 pages17 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago