onsemi 2N3904TF
Production
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Inventory History
3 month trend: -15.19%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi 2N3904TF.
Fairchild Semiconductor
Future Electronics
Newark
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.048
$ 0.056
Stock
834,207
3,854,144
Authorized Distributors
9
10
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
200 mV
300 mV
hFE Min
100
100
Power Dissipation
625 mW
625 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N3904TF.
Related Parts
onsemi2N3904BU
Transistor General Purpose BJT NPN 40 Volt 0.2 Amp 3-Pin TO-92 Bulk
onsemi2N3904TA
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemi2N3904TFR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Descriptions
Descriptions of onsemi 2N3904TF provided by its distributors.
Transistor General Purpose BJT NPN 40 Volt 0.2 Amp 3-Pin TO-92 Tape And Reel
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - TO-92
Bipolar Transistors - BJT NPN 40V 200mA
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~+150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -15.19%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Documents
Download datasheets and manufacturer documentation for onsemi 2N3904TF.
Fairchild Semiconductor
Future Electronics
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements